PHOTON-MEDIATED SEQUENTIAL RESONANT-TUNNELING IN INTENSE TERAHERTZ ELECTRIC-FIELDS
PHOTON-MEDIATED SEQUENTIAL RESONANT-TUNNELING IN INTENSE TERAHERTZ ELECTRIC-FIELDS
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DOI：
10.1103/physrevlett.70.3792
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发表时间：
1993-06-14
影响因子：
8.6
通讯作者：
HARBISON, JP
中科院分区：
文献类型：
--
作者：
GUIMARAES, PSS;KEAY, BJ;HARBISON, JP
我们测量了自由电子激光产生的太赫兹强电场作用下半导体超晶格的电流-电压特性。非线性I-V曲线呈现出新的结构，我们将其归因于光子介导的顺序共振隧穿。这个隧穿过程包括由太赫兹电场诱导的阱到阱的顺序隧穿到光子边带中。
We have measured the current-voltage (I-V) characteristic of semiconductor superlattices in the presence of intense terahertz electric fields produced by free-electron lasers. The nonlinear I-V curves exhibit new structure that we attribute to photon-mediated sequential resonant tunneling. This tunneling process consists of well to well sequential tunneling into photon sidebands induced by the terahertz electric fields.