Thick-film MEMS thermoelectric sensor fabricated using a thermally assisted lift-off process
Thick-film MEMS thermoelectric sensor fabricated using a thermally assisted lift-off process
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DOI：
10.1117/1.jmm.15.2.024501
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发表时间：
2016-04-01
影响因子：
2
通讯作者：
Lin, Qiao
中科院分区：
文献类型：
--
作者：
Jia, Yuan;Cai, Haogang;Lin, Qiao
提出了一种采用低温热辅助剥离工艺制作的厚膜微机电系统热电传感器。在该工艺期间，由于下面的光刻限定的光致抗蚀剂图案的热回流，厚金属或半导体膜经历受控的破裂，从而促进光致抗蚀剂的牺牲性去除。这使得能够快速和可靠地图案化厚膜，否则通过常规工艺难以实现。由60结厚膜锑-铋热电堆组成的传感器的实验结果表明，电导率为5.44 × 10（6）S/m，塞贝克系数为114 μ V/K每结，这是从散装材料获得的。因此，厚膜传感器可以潜在地允许低噪声、高效率的热电测量。(C)2016年，美国光电仪器工程师学会（SPIE）
This paper presents a thick-film microelectromechanical systems thermoelectric sensor fabricated by a low-temperature thermally assisted lift-off process. During the process, thick metal or semiconductor films experience controlled breakup due to thermal reflow of the underlying lithographically defined photoresist patterns, thereby facilitating the sacrificial removal of the photoresist. This enables rapid and reliable patterning of thick films that can otherwise be difficult to achieve by conventional processes. Experimental results with a sensor consisting of a 60-junction thick-film antimony-bismuth thermopile demonstrate an electric conductivity of 5.44 x 10(6) S/m and a Seebeck coefficient of 114 mu V/K per junction, which are comparable to those obtained from bulk materials. Thus, the thick-film sensor can potentially allow low-noise, high-efficiency thermoelectric measurements. (C) 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)