Er-doped glass ridge-waveguide amplifiers fabricated with a collimated sputter deposition technique
Er-doped glass ridge-waveguide amplifiers fabricated with a collimated sputter deposition technique
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采用准直溅射沉积技术制造的掺铒玻璃脊形波导放大器
DOI：
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发表时间：
1997
影响因子：
2.6
通讯作者：
M. Migliuolo
中科院分区：
文献类型：
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作者：
Cheng Chung Li;Hong Koo Kim;M. Migliuolo
报道了一种新的掺铒玻璃脊形波导的制作工艺。该工艺在限定波导的横向尺寸时不需要蚀刻Er掺杂膜，但涉及使用聚酰亚胺作为牺牲层的剥离工艺。使用准直溅射技术在350/spl deg/C下沉积Er掺杂的钠钙硅酸盐玻璃膜（1.5 /spl μ/m厚）。已知常规溅射技术与剥离工艺不相容。准直溅射，但是，使我们很容易剥离的Er掺杂的薄膜，并产生良好的定义与光滑的表面轮廓的脊。由此制造的1.7厘米长的波导显示出1.55-/spl μ/m的信号增强15.4分贝与980纳米的泵浦功率为40毫瓦。这种增强完全补偿了Er吸收和波导损耗，并导致7.2 dB的增益。
We report a new fabrication process for Er-doped glass ridge waveguides. The process does not require etching of an Er-doped film in defining the lateral dimension of a waveguide, but involves a liftoff process using polyimide as a sacrificial layer. An Er-doped soda-lime silicate glass film (1.5 /spl mu/m thick) was deposited at 350/spl deg/C using a collimated sputtering technique. Conventional sputtering techniques have been known to be incompatible with a liftoff process. The collimated sputtering, however, allowed us easy liftoff of Er-doped films, and produced well-defined ridges with smooth surface profiles. A 1.7-cm-long waveguide thus fabricated shows a 1.55-/spl mu/m signal enhancement of 15.4 dB with a 980-nm pump power of 40 mW. This enhancement fully compensates for both Er absorption and waveguide losses, and results in a gain of 7.2 dB.