Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction
Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction
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DOI：
10.1063/1.4818620
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发表时间：
2013-08-12
影响因子：
4
通讯作者：
Kokubun, Yoshihiro
中科院分区：
文献类型：
--
作者：
Nakagomi, Shinji;Momo, Toshihiro;Kokubun, Yoshihiro
利用带隙为4.9eV的β-Ga 2 O3和带隙为3.02eV的6 H-SiC之间的异质结制备了深紫外（UV）光电二极管，并研究了其UV灵敏度。在p型6 H-SiC衬底上通过氧等离子体蒸镓制备了一层厚度为200 nm的β-Ga 2 O3薄膜。器件具有良好的整流特性。在反向偏压下，电流随着深紫外光强度的增加而线性增加。光电二极管的响应度是最高的深紫外光低于260 nm的波长。光电二极管对深紫外光的响应时间为毫秒级。(C)2013 AIP Publishing LLC.
A deep Ultraviolet (UV) photodiode was fabricated using a heterojunction between beta-Ga2O3 with a band gap of 4.9 eV, and 6H-SiC with a band gap of 3.02 eV, and investigated its UV sensitivity. A thin beta-Ga2O3 layer (200 nm) was prepared on a p-type 6H-SiC substrate through gallium evaporation in oxygen plasma. The device showed good rectifying properties. Under reverse bias, the current increased linearly with increasing deep-UV light intensity. The responsivity of the photodiode was highest to deep-UV light below a wavelength of 260 nm. The photodiode's response time to deep-UV light was in the order of milliseconds. (C) 2013 AIP Publishing LLC.