Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes
Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes
复制标题
InGaAs/InAlAs SAGCM雪崩光电二极管的理论研究
DOI：
10.1186/s11671-018-2559-5
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发表时间：
2018-05-21
影响因子：
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通讯作者：
Wang, Qiming
中科院分区：
文献类型：
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作者：
Cao, Siyu;Zhao, Yue;Wang, Qiming
本文对InGaAs/InAlAs分离吸收、分级、电荷和倍增雪崩光电二极管（SAGCM APD）进行了详细的研究，建立了雪崩光电二极管的理论模型。通过理论分析和二维模拟，充分了解了电荷层和隧穿效应对APD的影响。利用该预测模型可以计算不同倍增厚度下的电荷层设计（包括掺杂浓度和厚度）。研究发现，随着电荷层厚度的增加，电荷层中合适的掺杂浓度范围减小。与较薄的电荷层相比，较厚的电荷层中掺杂浓度的几个百分点的偏差会使APD的性能发生显著变化。计算了带-带隧穿的产生率，分析了隧穿效应对雪崩场的影响。证实了隧穿效应会降低雪崩场和倍增因子。理论模型和分析是基于InGaAs/InAlAs APD的，然而，它们也适用于其他APD材料系统。
In this paper, we provide a detailed insight on InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and a theoretical model of APDs is built. Through theoretical analysis and two-dimensional (2D) simulation, the influence of charge layer and tunneling effect on the APDs is fully understood. The design of charge layer (including doping level and thickness) can be calculated by our predictive model for different multiplication thickness. We find that as the thickness of charge layer increases, the suitable doping level range in charge layer decreases. Compared to thinner charge layer, performance of APD varies significantly via several percent deviations of doping concentrations in thicker charge layer. Moreover, the generation rate (Gbtt) of band-to-band tunnel is calculated, and the influence of tunneling effect on avalanche field was analyzed. We confirm that avalanche field and multiplication factor (Mn) in multiplication will decrease by the tunneling effect. The theoretical model and analysis are based on InGaAs/InAlAs APD; however, they are applicable to other APD material systems as well.