Numerical analysis of frequency dispersion of transconductance in GaAs MESFETs
Numerical analysis of frequency dispersion of transconductance in GaAs MESFETs
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DOI：
10.1109/16.481720
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发表时间：
1996-02
影响因子：
3.1
通讯作者：
S. Lo;Chien-Ping Lee
中科院分区：
文献类型：
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作者：
S. Lo;Chien-Ping Lee
提出了 GaAs MESFET 跨导色散的全二维数值模型。根据模拟结果，主要的表面陷阱属于空穴陷阱类型，以获得与报告的测量结果一致的结果。负表面电荷的交流频率相关调制可以解释这种异常现象。栅极金属电极注入和发射的空穴与表面空穴陷阱相互作用，导致栅极到源极和栅极到漏极电阻的变化，进而引起跨导的变化。还考虑了栅极电压和栅极长度对色散的影响。与报告的结果非常一致。
A fully two-dimensional numerical model for the transconductance dispersion in GaAs MESFETs is presented. According to simulated results, the dominating surface traps belong to the hole trap type in order to obtain consistent results with reported measurements. The AC frequency-dependent modulation of negative surface charge can explain this anomalous phenomenon. The holes injecting from and emitting out of the gate metal electrode interact with the surface hole traps, and result in the change of the gate-to-source and the gate-to-drain resistances, which in turn cause the change in transconductance. The gate voltage and the gate length effects on the dispersion are also considered. Good agreement with reported results is obtained.