Analysis of resist pattern collapse by direct peeling method with AFM tip
Analysis of resist pattern collapse by direct peeling method with AFM tip
复制标题
AFM 尖端直接剥离法抗蚀剂图案塌陷分析
DOI：
10.1109/imnc.1999.797542
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
Y. Kaneko
中科院分区：
文献类型：
--
作者：
A. Kawai;Y. Kaneko
近年来，微制造技术对于实现诸如高密度存储器和液晶显示器的电子微型器件已经变得重要。由于微光刻胶图形在显影过程中会发生塌陷，因此提高微光刻胶图形的附着力是一个亟待解决的重要问题。人们在监测粘合性能方面做了大量的努力，主要是通过传统的方法，如SEM观察和剥离试验。然而，似乎缺乏的是定量和直接的分析。在这方面，我们已经提出了直接分析抗蚀剂图案粘附性的原理，即用AFM针尖直接剥离（DPAT）。本研究的目的是通过实验验证这种新的分析方法的有效性。具体而言，我们专注于在170nm尺寸的抗蚀剂图案崩溃的形状依赖性。
In recent years, micro fabrication techniques have become important to realize electronic micro devices such as high density memories and liquid crystal displays. Adhesion improvement of micro resist patterns has been recognized as an important problem to be solved because of pattern collapse during the development process. A great deal of effort has been made on monitoring the adhesion property, mainly by conventional methods such as SEM observation and peel tests. What seems to be lacking, however, is quantitative and direct analysis. In this regard, we have already proposed the principle of direct analysis for resist pattern adhesion, that is, direct peeling with an AFM tip (DPAT). The purpose of this study is to prove the validity of this novel analysis method experimentally. Concretely, we focus on shape dependency of resist pattern collapse in 170nm size.