Enhanced room-temperature positive magnetoresistance of a-C:Fe film
Enhanced room-temperature positive magnetoresistance of a-C:Fe film
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DOI：
10.1016/j.carbon.2007.05.005
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发表时间：
2007-08
期刊：
影响因子：
10.9
通讯作者：
Peng-Li Tian;Xi Zhang;Q. Xue
中科院分区：
文献类型：
--
作者：
Peng-Li Tian;Xi Zhang;Q. Xue
利用脉冲激光沉积技术在n-Si衬底上合成了掺铁非晶碳（a-C:Fe）薄膜和纯非晶碳（a-C）薄膜。a- c:Fe薄膜在室温下具有正磁阻（在磁场B=1T时为15%），而在260K以下具有负磁阻。a-C:Fe薄膜的导电性比纯a-C薄膜高一个数量级。发现a-C:Fe薄膜的导电机理与纯a-C薄膜有很大的不同。磁场可以显著调节a-C:Fe薄膜中电子传导的活化能。a-C:Fe薄膜的磁阻效应似乎很难用已知的磁阻机制来解释。
Fe-doped amorphous carbon (a-C:Fe) film and pure amorphous carbon (a-C) film were synthesized on n-Si substrate using pulsed laser deposition. The a-C:Fe film has a positive magnetoresistance (15% at magnetic field B=1T) at room temperature, while it has a negative magnetoresistance below 260K. The electrical conduction in a-C:Fe film is one order of magnitude higher than that in pure a-C film. It is found that a-C:Fe film has very different conduction mechanism from that of pure a-C film. The activation energy of electron conduction in a-C:Fe film could be tuned significantly by magnetic field. The magnetoresistance effect of the a-C:Fe film seems difficult to explain by known magnetoresistance mechanisms.