Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment
Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment
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通过氢等离子体处理降低功函数和提高电导率，增强 ZnO 薄膜的场致发射
DOI：
10.1063/1.3167301
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发表时间：
2009-06-29
影响因子：
4
通讯作者：
Yan, H.
中科院分区：
文献类型：
--
作者：
You, J. B.;Zhang, X. W.;Yan, H.
采用H/O等离子体对磁控溅射法制备的ZnO薄膜进行处理。结果表明，经H等离子体处理后，ZnO薄膜的场发射性能得到了显著改善，而经O等离子体处理后，其场发射性能略有下降。FE特性的改善归因于ZnO：H薄膜的功函数降低和电导率增加。采用导电原子力显微镜研究了等离子体处理对ZnO纳米导电性的影响，这些结果与FE数据有很好的相关性，有助于更清晰地描述ZnO：H薄膜的电子发射。
The ZnO films deposited by magnetron sputtering were treated by H/O plasma. It is found that the field emission (FE) characteristics of the ZnO film are considerably improved after H-plasma treatment and slightly deteriorated after O-plasma treatment. The improvement of FE characteristics is attributed to the reduced work function and the increased conductivity of the ZnO:H films. Conductive atomic force microscopy was employed to investigate the effect of the plasma treatment on the nanoscale conductivity of ZnO, these findings correlate well with the FE data and facilitate a clearer description of electron emission from the ZnO:H films.