Short-wavelength solar-blind detectors - Status, prospects, and markets
Short-wavelength solar-blind detectors - Status, prospects, and markets
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DOI：
10.1109/jproc.2002.1021565
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发表时间：
2002-06-01
影响因子：
20.6
通讯作者：
Razeghi, M
中科院分区：
文献类型：
--
作者：
Razeghi, M
尤其是在III-氮化物半导体和AlxGa1-xN材料的研究工作中取得的最新进展重新引起了人们的兴趣，并导致了能够探测中紫外区和近紫外区(波长类似于200-400 nm)的紫外光探测器的发展。有越来越多的应用需要使用这种传感器，在其中许多应用中，重要的是能够在不检测红外或可见光的情况下感知紫外光，特别是来自太阳的紫外光，以便最大限度地减少错误检测或高背景的机会。因此，短波紫外线探测器的研究工作最近集中于实现短波长的“日盲”探测器，根据定义，这种探测器对波长长于285 nm的光子不敏感。本文综述了Al_xGa_(1-x)N基日盲紫外探测器的研究进展。将讨论与材料合成和器件制造有关的技术问题。我们将回顾和讨论这些探测器的现状和未来的前景。
Recent advances in the research work on III-nitride semiconductors and AlxGa1-xN materials in particular has renewed the interest and led to significant progress in the development of ultraviolet (UV) photodetectors able to detect light in the mid- and near-UV spectral region (lambda similar to200-400 nm). There have been a growing number of applications which require the, use of such sensors and, in many of these, it is important to be able to sense UV light without detecting infrared or visible light, especially from the Sun, in order to minimize the chances of false detection or high background. The research work on short-wavelength UV detectors has, therefore, been recently focused on realizing short-wavelength "solar-blind" detectors which, by definition, are insensitive to photons with wavelengths longer than similar to285 nm. In this paper the development of AlxGa1-xN-based solar-blind UV detectors will be reviewed. The technological issues pertaining to materials synthesis and device fabrication will be discussed. The current state-of-the-art and future prospects for these detectors will be reviewed and discussed.