Role of heavy-ion nuclear reactions in determining on-orbit single event error rates
Role of heavy-ion nuclear reactions in determining on-orbit single event error rates
复制标题
DOI：
10.1109/tns.2005.860683
复制
发表时间：
2005-12
影响因子：
1.8
通讯作者：
C. L. Howe;R. Weller;R. Reed;M. Mendenhall;peixiong zhao;K. Warren;D. Ball;L. Massengill;K. Label;J. Howard;N. Haddad
中科院分区：
文献类型：
--
作者：
C. L. Howe;R. Weller;R. Reed;M. Mendenhall;peixiong zhao;K. Warren;D. Ball;L. Massengill;K. Label;J. Howard;N. Haddad
模拟表明，忽略离子-离子相互作用过程（两种粒子的Z>1）会导致某些技术的在轨单粒子翻转总误差率被低估两个数量级以上。包含离子-离子核反应导致显著不同的SEU错误率的CMOS器件含有高Z材料相比，由初级离子单独直接电离。装置的几何形状和材料的组成有一个显着的影响电荷沉积在小敏感体积的离子能量谱在空间中发现，与有限的能量范围内典型的地面测试。
Simulations show that neglecting ion-ion interaction processes (both particles having Z>1) results in an underestimation of the total on-orbit single event upset error rate by more than two orders of magnitude for certain technologies. The inclusion of ion-ion nuclear reactions leads to dramatically different SEU error rates for CMOS devices containing high Z materials compared with direct ionization by the primary ion alone. Device geometry and material composition have a dramatic effect on charge deposition in small sensitive volumes for the spectrum of ion energies found in space, compared with the limited range of energies typical of ground tests.