Forming and confining of dipolar excitons by quantizing magnetic fields
Forming and confining of dipolar excitons by quantizing magnetic fields
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DOI：
10.1103/physrevb.83.081307
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发表时间：
2011-02-15
影响因子：
3.7
通讯作者：
Kotthaus, J. P.
中科院分区：
文献类型：
--
作者：
Kowalik-Seidl, K.;Voegele, X. P.;Kotthaus, J. P.
我们证明了垂直于AlGaAs/GaAs耦合量子阱的磁场可以有效地捕获偶极激子，并导致激子形成和限制在照明区域的稳定。因此，偶极激子的密度显著提高，达到10(11)cm（-2）左右。利用朗道能级光谱学研究了被照射区域中多余空穴的密度。根据激发功率和外加电场的不同，空穴密度可以调谐到一个数量级，最高可达2.5 x 10(11) cm(-2)，这一值与调制掺杂结构中的典型载流子密度相当。
We show that a magnetic field perpendicular to an AlGaAs/GaAs coupled quantum well efficiently traps dipolar excitons and leads to the stabilization of the excitonic formation and confinement in the illumination area. Hereby, the density of dipolar excitons is remarkably enhanced up to similar to 10(11) cm(-2). By means of Landau level spectroscopy we study the density of excess holes in the illuminated region. Depending on the excitation power and the applied electric field, the hole density can be tuned over one order of magnitude up to similar to 2.5 x 10(11) cm(-2)-a value comparable with typical carrier densities in modulation-doped structures.