Surface roughening during plasma-enhanced chemical-vapor deposition of hydrogenated amorphous silicon on crystal silicon substrates
Surface roughening during plasma-enhanced chemical-vapor deposition of hydrogenated amorphous silicon on crystal silicon substrates
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DOI：
10.1103/physrevb.56.4243
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发表时间：
1997-08-15
影响因子：
3.7
通讯作者：
Gallagher, A
中科院分区：
文献类型：
--
作者：
Tanenbaum, DM;Laracuente, AL;Gallagher, A
使用扫描隧道显微镜研究了通过血浆增强化学蒸气沉积（PECVD）生长的一系列氢化无定形硅（A-SI：H）的薄膜的形态。底物在原子上是平坦的，无氧化物的单晶硅。膜在直接连接到表面分析室的PECVD腔中生长，生长和测量之间没有空气暴露。电影的均匀粗糙度随膜厚度而增加。通过计算A-SI：H膜表面的RMS粗糙度和侧向相关长度，从测得的地形的高度差相关函数来实现这种粗糙的定量。由于沉积自由基物种的通量及其与生长表面的相互作用，薄膜表面上发生了均匀的粗糙。
The morphology of a series of thin films of hydrogenated amorphous silicon (a-Si:H) grown by plasma-enhanced chemical-vapor deposition (PECVD) is studied using scanning tunneling microscopy. The substrates were atomically flat, oxide-free, single-crystal silicon. Films were grown in a PECVD chamber directly connected to a surface analysis chamber with no air exposure between growth and measurement. The homogeneous roughness of the films increases with film thickness. The quantification of this roughening is achieved by calculation of both rms roughness and lateral correlation lengths of the a-Si:H film surface from the height difference correlation functions of the measured topographs. Homogeneous roughening occurs over the film surface due to the collective behavior of the flux of depositing radical species and their interactions with the growth surface.