Fast and Accurate Temperature-Dependent Current Modeling of HBTs Using the Dimension Reduction Method
Fast and Accurate Temperature-Dependent Current Modeling of HBTs Using the Dimension Reduction Method
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DOI：
10.1109/access.2019.2950179
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发表时间：
2019
期刊：
影响因子：
3.9
通讯作者：
Wenrui Hu;Andong Huang;Haorui Luo;Yong-xin Guo
中科院分区：
文献类型：
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作者：
Wenrui Hu;Andong Huang;Haorui Luo;Yong-xin Guo
在过去的几十年里，经验模型在器件建模中得到了广泛而成功的应用。然而，为了准确地捕捉半导体器件中复杂的热效应，它们变得越来越复杂。因此，本工作的目的是利用一般降维方法快速准确地构建考虑热效应的半导体器件大信号模型。一般来说，结电压维度由经验函数表示，而结温度维度由一阶泰勒级数近似描述。最终的分析模型是两组独立的经验函数的组合。这些函数是由在不同环境温度下的脉冲I-V测量构建的。不同组分的百分比由热水平控制。对两个商用InGaP/GaAs异质结双极晶体管进行了研究，验证了该方法的有效性。大信号模型在先进设计系统中实现。在I-V特性、s参数和功率扫描的测量和仿真之间实现了极好的一致性。降维方法采用泰勒级数展开温度维数，可以有效地减少方程和参数的数量。此外，该方法还可应用于基于新材料或工艺技术的各种器件的热建模。因此，降维方法对微波半导体器件的快速、准确热建模具有重要的实用价值。
Empirical models have been widely and successfully used in device modeling in the past few decades. However, they are becoming increasingly intricate to accurately capture the complex thermal effects in semiconductor devices. Therefore, the aim of this work is to utilize a general dimension-reduction method to quickly and accurately construct large-signal models of semiconductor devices with consideration of thermal effects. In general, the junction voltage dimension is represented by empirical functions, whereas the junction temperature dimension is described by the first-order Taylor series approximation. The final analytical current model is a combination of two independent sets of empirical functions. These functions are constructed from pulsed I-V measurements at different ambient temperatures. The percentages of different components are controlled by the thermal level. Two commercial InGaP/GaAs heterojunction bipolar transistors are investigated to verify the effectiveness of this method. The large-signal models are implemented in Advanced Design System. Excellent agreement is achieved between measurement and simulation of the I-V characteristics, S-parameters, and power sweeps. The dimension reduction method is able to effectively reduce the number of equations and parameters because the temperature dimension is expanded by using a Taylor series. In addition, this method would be applied to the thermal modeling of various devices based on new materials or process technologies. Accordingly, the dimension reduction method is powerful and useful in fast and accurate thermal modeling of microwave semiconductor devices.