Effect of CdCl2 activation on the impurity distribution in CdTe/CdS solar cell structures
Effect of CdCl2 activation on the impurity distribution in CdTe/CdS solar cell structures
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DOI：
10.1016/j.tsf.2004.11.053
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发表时间：
2005-06-01
期刊：
影响因子：
2.1
通讯作者：
Halliday, DP
中科院分区：
文献类型：
--
作者：
Emziane, M;Durose, K;Halliday, DP
研究了用7 N CdTe制备的CdTe/CdS/In 2 O3：F/玻璃太阳能电池结构，以确定杂质的分布。本研究进行了定量二次离子质谱（西姆斯）分析从碲化镉表面通过玻璃基板。特别强调的是，潜在的电活性杂质来自氯化镉（CdCl 2）处理步骤，因为这些杂质可能会影响CdTe/CdS器件的性能。杂质：Cl，O，Cu，Na，In，Sb，Sri，Si，Zn，Pb和S被分析为生长和CdCl 2处理的结构。用离子注入的CdTe和CdS标准样品进行了西姆斯定量，结果表明O和Cu不是由CdCl_2激活过程产生的。Zn、Sri和Pb在加工过程中也是不变的。其他杂质如Cl、Na和Sb肯定存在于活化的结构中，因为它们存在于处理中使用的CdCl 2起始材料中。Si从玻璃衬底的扩散，以及碲和硫的相互扩散在CdTe/CdS界面后的氯化镉处理也被强调。(c)2004年由Elsevier B. V.出版
CdTe/CdS/In2O3:F/glass solar cell structures made using 7N CdTe were investigated to determine the distribution of impurities. This study was carried out using quantitative secondary ion mass spectrometry (SIMS) profiling from the CdTe surface through the glass substrate. Particular emphasis was placed on the potential for electrically active impurities to originate from the cadmium chloride (CdCl2) processing step, since such impurities are likely to affect the CdTe/CdS device performance. The impurities: Cl, O, Cu, Na, In, Sb, Sri, Si, Zn, Pb and S were profiled for as-grown and CdCl2 treated structures. Ion implanted CdTe and CdS standards were used for SIMS quantification.It has been shown that O and Cu do not originate from the CdCl2 activation process. Zn, Sri and Pb are also invariant on processing. Other impurities such as Cl, Na and Sb are definitely present in the activated structures due to their presence in the CdCl2 starting material used in the treatment. Si diffusion from the glass substrate as well as Te and S interdiffusion at the CdTe/CdS interface following the CdCl2 treatment were also highlighted. (c) 2004 Published by Elsevier B.V.