Thermal history dependent photoconductivity in Pr0.5Sr0.5MnO3 thin film
Thermal history dependent photoconductivity in Pr0.5Sr0.5MnO3 thin film
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DOI：
10.1063/1.3245393
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发表时间：
2009-10
影响因子：
3.2
通讯作者：
Litian Hu;Y. Sun;Bosen Wang;Z. Sheng;X. Luo;X. B. Zhu;Z. R. Yang;W. Song;J. Dai;Zhizhen Yin;Wenbin Wu
中科院分区：
文献类型：
--
作者：
Litian Hu;Y. Sun;Bosen Wang;Z. Sheng;X. Luo;X. B. Zhu;Z. R. Yang;W. Song;J. Dai;Zhizhen Yin;Wenbin Wu
在Pr0.5Sr0.5MnO3薄膜的热滞后区观察到与热历史相关的光电导率。在冷却过程中，薄膜在黑暗中表现出向上的阻力松弛。在光照下，观察到瞬态光导效应。然而，在没有光照的情况下，它表现出向下的电阻松弛，在光照的情况下，它表现出持续的光电导率（PPC）行为。在110 K光密度为1.25 mW mm−2时，PPC比为18.1%。研究发现，外磁场的作用与光照的作用相似。在110 K和0.25 t的低磁场条件下，磁阻比达到44.4%，并讨论了铁磁性金属与电荷有序和轨道有序绝缘体态之间的相竞争和相稳定切换机制。研究结果对光/磁场敏感器件和存储器件的实际应用具有重要意义。
Thermal history dependent photoconductivity has been observed in the thermal hysteresis region of Pr0.5Sr0.5MnO3 thin film. In the cooling process, the film shows an upward resistance relaxation in darkness. Under light illumination, the transient photoconductivity effect is observed. However, it exhibits a downward resistance relaxation without illumination and persistent photoconductivity (PPC) behavior with light illumination in the warming process. The PPC ratio is 18.1% at 110 K with a light density of 1.25 mW mm−2. It is found that the external magnetic field plays a similar role as the light illumination. The persistent magnetoresistance ratio reaches 44.4% at 110 K with a low magnetic field of 0.25 T. The underlying mechanism is discussed based on phase competition and phase stability switch between ferromagnetic metal and charge- and orbital-ordered insulator states. The results may be important for practical applications in photo-/magnetic field sensitive and memory devices.