Theory of resistivity upturns in metallic cuprates
Theory of resistivity upturns in metallic cuprates
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DOI：
10.1103/physrevb.80.134518
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发表时间：
2009-05
影响因子：
3.7
通讯作者：
Wei Chen;B. M. Andersen;P. Hirschfeld
中科院分区：
文献类型：
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作者：
Wei Chen;B. M. Andersen;P. Hirschfeld
丹麦哥本哈根DK-2100哥本哈根大学纳米科学中心，尼尔斯·玻尔研究所。我们认为，实验观察到的铜酸盐在低温下的电阻率上升可以通过适当地解释强关联金属主体中的无序效应来解释。在用非齐次无限制Hartree-Fock近似处理的Hubbard模型的实空间对角化计算直流电导率时，我们fi发现，相关作用在杂质周围诱导了磁滴，并产生了额外的磁散射，导致了电阻率的上升。研究表明，态密度中的赝隙能同时增强无序诱导的磁态和电阻率的上升。
Nano-Science Center, Niels Bohr Institute, University of Copenhagen,Universitetsparken 5, DK-2100 Copenhagen, DenmarkWe propose that the experimentally observed resistivity upturn of cuprates at low temperaturesmay be explained by properly accounting for the effects of disorder in a strongly correlated metallichost. Within a calculation of the DC conductivity using real-space diagonalization of a Hubbardmodel treated in an inhomogeneous unrestricted Hartree-Fock approximation, we find that corre-lations induce magnetic droplets around impurities, and give rise to additional magnetic scatteringwhich causes the resistivity upturn. A pseudogap in the density of states is shown to enhance boththe disorder-induced magnetic state and the resistivity upturns.(May 11, 2009)