Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy
Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy
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DOI：
10.7567/1347-4065/aaeb38
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发表时间：
2018-11
影响因子：
1.5
通讯作者：
Yuto Futamura;Yuta Nakashima;A. Ohta;M. Ikeda;K. Makihara;S. Miyazaki
中科院分区：
文献类型：
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作者：
Yuto Futamura;Yuta Nakashima;A. Ohta;M. Ikeda;K. Makihara;S. Miyazaki
利用SiH4气体在超薄SiO2 /n-Si衬底上通过低压化学气相沉积形成了超薄SiO2夹层的六重堆叠Si量子点（Si- qds）结构，并利用硬x射线光电子能谱对堆叠Si- qds结构上形成的半透明电极施加直流偏压，评估了其垂直电势分布。由Si- Si键合单元引起的Si1s光电子能谱可以反卷积成对应于6个Si- qds层和Si衬底的7个分量。很明显，相邻两个点层的组件之间的能量转移向堆叠点结构的上部变得更大。这一结果表明电场集中在上部，与所提出的模型一致，该模型可以解释多重堆叠Si-QDs结构的弹道电子发射特性。
Six-fold stacked Si quantum dots (Si-QDs) structures with ultrathin SiO2 interlayers were formed on ultrathin SiO2 layer/n-Si substrates by low-pressure chemical vapor deposition using a SiH4 gas and their vertical electric potential distributions were evaluated using hard X-ray photoelectron spectroscopy under a DC bias application to the semitransparent electrodes formed on the stacked Si-QDs structure. The Si1s photoelectron spectra due to Si–Si bonding units can be deconvoluted into seven components corresponding to the six Si-QDs layers and Si substrate. Obviously, the energy shift between the components for two adjacent dots layers becomes larger towards the upper side of the stacked dots structure. This result indicates that the electric field concentrates on the upper side and is consistent with the proposed model that can explain the ballistic electron emission characteristics from multiple stacked Si-QDs structures.