Next generation of Ge1-ySny (y=0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission
Next generation of Ge1-ySny (y=0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission
复制标题
DOI：
10.1063/1.4745770
复制
发表时间：
2012-08-13
影响因子：
4
通讯作者：
Menendez, J.
中科院分区：
文献类型：
--
作者：
Grzybowski, G.;Beeler, R. T.;Menendez, J.
薄膜生长和反应动力学研究表明，三锗烷（Ge 3 H 8）是用于使用超高真空化学气相沉积外延合成Ge 1-ySny/Si（100）合金的上级Ge源。Ge 3 H8/SnD 4组合产生比传统Ge 2 H6/SnD 4方法高3-4倍的生长速率，其中膜Sn/Ge比率更紧密地反映相应的气相化学计量。这些进展导致了具有Sn浓度高达至少9%和厚度接近1 μ m的光学质量Ge 1-ySny层。发现这些厚膜对于观察预测的直接-间接带隙交叉的阈值附近的强的、可调谐的光致发光信号是至关重要的。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4745770]
Film growth and reaction kinetics studies have shown that trigermane (Ge3H8) is a superior Ge source for the epitaxial synthesis of Ge1-ySny/Si(100) alloys using ultra-high vacuum chemical vapor deposition. The Ge3H8/SnD4 combination yields 3-4 times higher growth rates than the traditional Ge2H6/SnD4 approach, with film Sn/Ge ratios reflecting the corresponding gas-phase stoichiometries much more closely. These advances have led to optical quality Ge1-ySny layers with Sn concentrations up to at least 9% and thicknesses approaching 1 mu m. These thick films are found to be crucial for the observation of a strong, tunable photoluminescence signal near the threshold of the predicted direct-indirect bandgap crossover. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745770]