Thin-Film Encapsulated RF MEMS Switches
Thin-Film Encapsulated RF MEMS Switches
复制标题
薄膜封装 RF MEMS 开关
DOI：
10.1109/jmems.2007.892915
复制
发表时间：
2007
影响因子：
2.7
通讯作者：
J. Ebel
中科院分区：
文献类型：
--
作者：
K. Leedy;R. Strawser;R. Cortez;J. Ebel
本文演示了一种用于封装射频微机电系统（MEMS）开关的晶圆级薄膜封装工艺。单个并联电容开关封装在~1nL无机外壳中，工艺温度不超过300℃。覆盖开关的外壳由10nm的溅射氧化铝和1.67 nm的溅射氮化硅介电膜组成。开关和介质外壳同时通过外壳中的接入通道湿释放。释放后，通道被10纳米的溅射氧化铝和2-4微米的等离子体增强化学气相沉积二氧化硅或氮化硅密封。密封前后的电磁仿真和射频测试结果表明，射频对开关性能的影响最小。在密封之前，10 GHz的插入损耗和隔离平均分别为0.12和10.7 dB。密封后，相同器件的平均插入损耗和隔离度分别为0.12和10.1 dB。由于在评估纳米级体积方面存在挑战，因此没有完成封装气氛的完整表征
A wafer-level thin-film encapsulation process has been demonstrated to package radio-frequency (RF) microelectromechanical systems (MEMS) switches in this paper. Individual shunt capacitive switches were packaged in a ~1nL inorganic enclosure with process temperatures not exceeding 300 degC. A shell covering the switch consisted of 10 nm of sputtered alumina and 1.67 mum of sputtered silicon nitride dielectric film. The switch and dielectric shell were simultaneously wet-released through access channels in the shell. Following release, access channels were sealed with 10 nm of sputtered alumina and 2-4 mum of either plasma-enhanced chemical vapor deposited silicon dioxide or silicon nitride. Electromagnetic simulation and RF test results before and after sealing show minimal RF degradation of switch performance. Before sealing, the insertion loss and isolation at 10 GHz averaged 0.12 and 10.7 dB, respectively. After sealing, the same devices had an average insertion loss and isolation of 0.12 and 10.1 dB, respectively. Complete characterization of the package atmosphere was not completed due to challenges in assessing nanoliter-scale volumes