In situ electron-spin-resonance measurements of film growth of hydrogenated amorphous silicon
In situ electron-spin-resonance measurements of film growth of hydrogenated amorphous silicon
复制标题
氢化非晶硅薄膜生长的原位电子自旋共振测量
DOI：
10.1063/1.119073
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发表时间：
1997
影响因子：
4
通讯作者：
Kazunobu Tanaka
中科院分区：
文献类型：
--
作者：
S. Yamasaki;T. Umeda;J. Isoya;Kazunobu Tanaka
利用远程氢等离子体技术对氢化非晶硅（a- si:H）薄膜生长进行了原位电子自旋共振（ESR）测量。在a-Si:H沉积过程中和沉积后检测到Si悬键信号，以及原子氢和与硅烷分子相关的自由基的气相ESR信号。实时观察到Si悬键信号强度的动态变化，信号强度随着沉积时间的增加而增加，由于结构松弛而停止沉积后信号强度降低。原位ESR技术在微观理解薄膜生长和表面反应方面具有很高的潜力。
In situ electron-spin-resonance (ESR) measurements of film growth of hydrogenated amorphous silicon (a-Si:H) using a remote hydrogen plasma technique have been performed. The Si dangling-bond signal in a-Si:H during and after deposition has been detected, in addition to the gas-phase ESR signals both of atomic hydrogen and radicals related with silane molecules. Dynamic changes of the Si dangling-bond signal intensity have been observed in real-time, where the signal intensity increases with deposition time and decreases after stopping the deposition due to a structural relaxation. High potentiality of in situ ESR techniques for microscopic understanding of film growth and surface reaction has been demonstrated.