Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications
Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications
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GaN 上定向单晶 CsPbBr3 的气相非相称异质外延：面向集成光电应用
DOI：
10.1021/acsnano.9b02885
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发表时间：
2019
期刊：
影响因子：
17.1
通讯作者：
Qing Zhang
中科院分区：
文献类型：
--
作者：
Liyun Zhao;Yan Gao;Man Su;Qiuyu Shang;Zhen Liu;Qi Li;Qi Wei;Meili Li;Lei Fu;Yangguang Zhong;Jia Shi;Jie Chen;Yue Zhao;Xiaohui Qiu;Xinfeng Liu;Ning Tang;Guichuan Xing;Xina Wang;Bo Shen;Qing Zhang
将金属卤化物钙钛矿与成熟的现代半导体技术相结合，对于促进应用级光电子器件的发展具有重要意义。为了实现这种器件，研究沉积在半导体技术核心材料上的钙钛矿相的生长动力学和界面载流子动力学是必不可少的。本文报道了用化学气相沉积方法在纤锌矿结构GaN/蓝宝石衬底上无公度异质外延生长高度取向的单晶溴化铯铅(CsPbBr3)。CsPbBr3微片晶体在室温下呈现绿色激光，具有与范德华云母衬底上生长的晶体相当的结构稳定性。时间分辨光致发光光谱研究表明，第二类CsPbBr3-GaN异质结有效地增强了CsPbBr3内部自由载流子的分离和提取。这些发现为CsPbBr3钙钛矿材料的制备和应用级集成光电子器件提供了新的见解。
Integrating metallic halide perovskites with established modern semiconductor technology is significant for promoting the development of application-level optoelectronic devices. To realize such devices, exploring the growth dynamics and interfacial carrier dynamics of perovskites deposited on the core materials of semiconductor technology is essential. Herein, we report the incommensurate heteroepitaxy of highly oriented single-crystal cesium lead bromide (CsPbBr3) onc-wurtzite GaN/sapphire substrates with atomically smooth surface and uniform rectangular shape by chemical vapor deposition. The CsPbBr3microplatelet crystal exhibits green-colored lasing under room temperature and has a structural stability comparable with that grown on van der Waals mica substrates. Time-resolved photoluminescence spectroscopy studies show that the type-II CsPbBr3–GaN heterojunction effectively enhances the separation and extraction of free carriers inside CsPbBr3. These findings provide insights into the fabrication and application-level integrated optoelectronic devices of CsPbBr3perovskites.