Diamond emitters fabrication and theory

Diamond emitters fabrication and theory
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DOI:
10.1116/1.588986
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发表时间:
1996-05-01
影响因子:
1.4
通讯作者:
Lyszczarz, TM
Lyszczarz, TM
中科院分区:
工程技术4区
文献类型:
--
作者:
Geis, MW;Twichell, JC;Lyszczarz, TM

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描述了门控金刚石场发射阴极的制造并讨论了其工作原理。这些阴极采用商用金刚石砂粒制成,并添加镍盐和钙盐以增强发射。由此产生的结构类似于场发射 Spindt 阴极,其内部金属锥体被类似 100 nm 的金刚石砂粒层取代。这些阴极的发射发生在所有场发射器件中报告的最低栅极电压下,并且不受在超过 100 Pa 的 N-2 压力下工作的影响。在 6x10(-4) Pa 压力下在氧气和 H2S 中运行会降低发射性能,但一旦环境压力降至 1x10(-4) Pa 以下,阴极就会恢复。发射电流噪声在 8 小时内为 2.5% rms,在 3 ms 内为 1% rms。这些阴极承受高栅极电流,其变化范围为发射电流的 0.2 至 1000 倍。众所周知,高栅极电流取决于工艺,而不是阴极固有的。发射性能是通过金刚石稳定的负电子亲和力来解释的,它允许在几乎没有电场(0-1 V mu(-1))的情况下将电子从金刚石注入到真空中。阴极操作受到电子在背面金属-金刚石界面处注入金刚石的限制,这取决于金刚石的掺杂和该界面的粗糙度。 (C) 1996 年美国真空协会。
The fabrication of gated diamond field-emission cathodes is described and a theory of their operation is discussed. These cathodes are made using commercial diamond grit with the addition of Ni and Ca salts to enhance emission. The resulting structure resembles a field-emission Spindt cathode with the internal metal cone replaced by a similar to 100 nm layer of diamond grit. Emission from these cathodes occurs at the lowest reported gate voltage of any field emission device and is unaffected by operation at pressures of over 100 Pa of N-2. Operation in oxygen and H2S at pressures of 6x10(-4) Pa degrades emission, but the cathodes recover once the ambient pressure is reduced to below 1x10(-4) Pa. The emission current noise is 2.5% rms over an 8 h period and 1% rms over 3 ms. These cathodes suffer from high gate current that varies from 0.2 to 1000 times the emitted current. The high gate current is known to be process dependent and not inherent to the cathodes. The emission performance is explained by the stable negative electron affinity of diamond, which allows for injection of electrons from diamond into vacuum with little to no electric field, 0-1 V mu(-1). Cathode operation is limited by the injection of electrons into the diamond at the back metal-diamond interface, which depends upon the doping of the diamond and the roughness of that interface. (C) 1996 American Vacuum Society.