Underlayer And Substrate Effects In RF-magnetron Sputtered Barium Ferrite Thin Film Media
Underlayer And Substrate Effects In RF-magnetron Sputtered Barium Ferrite Thin Film Media
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射频磁控溅射钡铁氧体薄膜介质中的底层和基底效应
DOI：
10.1109/20.617819
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
K. L. Tan
中科院分区：
文献类型：
--
作者：
A. Wee;J. Wang;A. Huan;L. Tan;R. Gopalakrishnan;K. L. Tan
采用各种溅射底层和市售基板，以优化磁记录介质的钡铁氧体（BaM）薄膜的特性的效果进行了研究。我们的研究结果表明，底层或基板的选择控制所得到的表面形貌和磁性能的BaM膜。特别是，当沉积在Al/sub 2/O/sub 3/的非晶溅射底层上时，获得了具有高介电常数、良好矩形度、低开关场分布（分别>5000 Oe、0.92和0.58）和具有c轴面内取向织构的钡铁氧体薄膜。此外，Al/sub 2/O/sub 3/底层的使用导致等轴钡铁氧体晶粒，这可以允许有利地减少晶粒间相互作用，如特征/spl Δ/M曲线所证明的。
The effect of employing various sputtered underlayers and commercially available substrates in order to optimize the characteristics of barium ferrite (BaM) thin films for magnetic recording media have been studied. Our results show that the choice of underlayer or substrate controls the resultant surface morphology and magnetic properties of the BaM film. In particular, it was found that barium ferrite thin films with high coercivity, good squareness, low switching field distribution (>5000 Oe, 0.92, and 0.58, respectively) and possessing a c-axis in-plane orientation texture were achieved when deposited on an amorphous sputtered underlayer of Al/sub 2/O/sub 3/. In addition, the use of an Al/sub 2/O/sub 3/ underlayer results in equiaxial barium ferrite grains which may allow a favorable reduction in intergranular interaction as evidenced by the characteristic /spl Delta/M curves.