The investigation of boron-doped silicon using atom probe tomography
The investigation of boron-doped silicon using atom probe tomography
复制标题
使用原子探针断层扫描技术研究硼掺杂硅
DOI：
10.1088/1757-899x/7/1/012004
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
B. Deconihout
中科院分区：
文献类型：
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作者：
D. Blavette;E. Cadel;O. Cojocaru;B. Deconihout
三维原子探针(3DAP)是唯一能够在原子尺度上绘制出元素在3D中的分布的分析显微镜。3DAP在选定的小体积内提供局部化学成分的定量测量。最近设计了新一代仪器，即激光辅助层析原子探头(激光辅助广角原子探头LaWaTAP)，以使该仪器对不良电导体开放。使用超快激光脉冲而不是高压脉冲来蒸发表面原子，使微电子中的关键材料半导体或氧化物的分析成为可能。本文主要介绍了掺硼硅的制备方法及其应用。不同样品中与硼有关的深度分布(硼三角洲、SiGe玛雅层、注入硼的硅、…)将被讨论并与SIMS的结果进行比较。将对空间分辨率和灵敏度进行比较。
Three-dimensional atom-probe (3DAP) is the only analytical microscope able to map out the distribution of elements in 3D at the atomic scale. 3DAP provides quantitative measurements of local chemical composition in a small selected volume. A new generation of instrument, namely, a laser assisted tomographic atom probe (laser assisted wide angle atom probe LaWaTAP) has recently been designed in order to open the instrument to bad electric conductors. The use of ultra-fast laser pulses rather than of high-voltage pulses to field evaporate surface atoms makes the analysis of semiconductors or oxides that are key materials in microelectronics possible. This article is focussed on methodology and applications to boron-doped silicon. Depth profiles related to boron in various samples (boron deltas, SiGe Maya layers, boron-implanted silicon, …) will be discussed and compared to SIMS results. Spatial resolution and sensitivities will be compared.