Enhanced Light Extraction Mechanism of GaN-Based Light-Emitting Diodes Using Top Surface and Side-Wall Nanorod Arrays
Enhanced Light Extraction Mechanism of GaN-Based Light-Emitting Diodes Using Top Surface and Side-Wall Nanorod Arrays
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DOI：
10.1109/lpt.2010.2050582
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发表时间：
2010-05
影响因子：
2.6
通讯作者：
Chih-Chien Lin;Ching-Ting Lee
中科院分区：
文献类型：
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作者：
Chih-Chien Lin;Ching-Ting Lee
利用自催化气液固反应机理，采用电子束沉积法在GaN基发光二极管（LED）的顶面和侧壁上制备了无规的氧化铟锡（ITO）纳米棒阵列。当侧壁纳米棒阵列和顶面ITO纳米棒阵列以45°的夹角沉积时，可以获得粗糙的表面形貌和空气与p-GaN层之间的匹配折射率为1.6。与没有ITO纳米棒阵列的传统LED相比，光输出功率增加了34%，这归因于ITO纳米棒阵列粗糙的顶部和侧壁表面形态以及匹配的折射率。侧壁纳米棒阵列不仅可以提高光输出功率，而且可以拓宽光输出发散角。
Using a self-catalyst vapor-liquid-solid mechanism, random indium-tin-oxide (ITO) nanorod arrays were deposited on the top surface and side-wall of GaN-based light-emitting diodes (LEDs) by electron-beam deposition. When the side-wall nanorod arrays and the top surface ITO nanorod arrays were deposited at an oblique-angle of 45°, roughened surface morphology and matched refractive index of 1.6 between air and the p-GaN layer could be obtained. Comparing the conventional LEDs without ITO nanorod arrays, a 34% light output power increase was attributed to the roughened top and side-wall surface morphology and the matched refractive index caused by the ITO nanorod arrays. Not only were the side-wall nanorod arrays used to increase light output power, but the light output divergence angle could be widened by using side-wall nanorod arrays.