B cluster formation and dissolution in Si: A scenario based on atomistic modeling
B cluster formation and dissolution in Si: A scenario based on atomistic modeling
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DOI：
10.1063/1.123213
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发表时间：
1999-06
影响因子：
4
通讯作者：
L. Pelaz;G. Gilmer;H. Gossmann;C. Rafferty;M. Jaraíz;J. Barbolla
中科院分区：
文献类型：
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作者：
L. Pelaz;G. Gilmer;H. Gossmann;C. Rafferty;M. Jaraíz;J. Barbolla
提出了一个全面的硅中B团簇的成核、生长和溶解模型。我们分析了B在注入Si中的激活的基础上，详细的B和Si中的缺陷之间的相互作用。在该模型中，B团簇的成核需要高的间隙过饱和，这发生在植入过程中的损伤区域和植入后退火的早期阶段。B簇通过向预先存在的B簇添加间隙B而生长，导致具有高间隙含量的B复合物。随着退火的进行和Si间隙过饱和度的降低，B团簇发射出Si原子，留下具有低间隙含量的小的稳定的B络合物。B团簇的完全溶解涉及热产生的Si间隙原子，并且只有在非常高的温度或长的退火时间下才能实现。
A comprehensive model of the nucleation, growth, and dissolution of B clusters in Si is presented. We analyze the activation of B in implanted Si on the basis of detailed interactions between B and defects in Si. In the model, the nucleation of B clusters requires a high interstitial supersaturation, which occurs in the damaged region during implantation and at the early stages of the postimplant anneal. B clusters grow by adding interstitial B to preexisting B clusters, resulting in B complexes with a high interstitial content. As the annealing proceeds and the Si interstitial supersaturation decreases, the B clusters emit Si interstitials, leaving small stable B complexes with low interstitial content. The total dissolution of B clusters involves thermally generated Si interstitials, and it is only achieved at very high temperatures or long anneal times.