Fermi Surface Properties of USi 3
Fermi Surface Properties of USi 3
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USi 3 的费米表面性质
DOI：
10.1143/jpsj.69.1105
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发表时间：
2000
影响因子：
1.7
通讯作者：
Y. Ōnuki
中科院分区：
文献类型：
--
作者：
Y. Tokiwa;H. Harima;D. Aoki;S. Nojiri;M. Murakawa;K. Miyake;N. Watanabe;R. Settai;Y. Inada;H. Sugawara;H. Sato;Y. Haga;E. Yamamoto;Y. Ōnuki
我们成功生长了具有立方晶体结构的USi 3 单晶，并测量了横向磁阻和德哈斯-范阿尔芬(dHvA)振荡。观察到15个dHvA分支，范围从7.37×10 6 到2.33×10 8 Oe。这些分支与基于 5 f 移动 FLAPW 频带计算的理论分支非常一致。回旋加速器质量在0.39至4.17 m 0 范围内，与相应的带质量大致相同。这些结果表明，巡回 5 f 电子形成宽带。磁阻结果证实了开放轨道的存在，这可以通过能带10电子费米面得到很好的解释。
We succeeded in growing a single crystal of USi 3 with the cubic crystal structure and measured the transverse magnetoresistance and de Haas-van Alphen(dHvA) oscillation. Fifteen dHvA branches were observed, ranging from 7.37×10 6 to 2.33×10 8 Oe. These branches are in good agreement with theoretical ones based on 5 f -itinerant FLAPW band calculations. Cyclotron masses, which are in the range from 0.39 to 4.17 m 0 , are approximately the same as the corresponding band masses. These results indicate that the itinerant 5 f -electrons form wide bands. The magnetoresistance results confirmed the existence of open orbits, which can be well explained by the band 10-electron Fermi surface.