Optical properties of strain-balanced SiGe planar microcavities with Ge dots on SI substrates
Optical properties of strain-balanced SiGe planar microcavities with Ge dots on SI substrates
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SI 基底上带有 Ge 点的应变平衡 SiGe 平面微腔的光学特性
DOI：
10.1063/1.1496142
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发表时间：
2002
影响因子：
4
通讯作者：
Y. Shiraki
中科院分区：
文献类型：
--
作者：
K. Kawaguchi;M. Morooka;K. Konishi;S. Koh;Y. Shiraki
采用应变平衡SiGe/Si Bragg反射镜制备了含有Ge点的SiGe微腔，发现微腔结构中Ge点的光致发光受到腔效应的显著调制。在200 K温度下观察到了微腔的特征发光，发光的热激活能比量子威尔斯腔有很大提高。
SiGe microcavities with Ge dots were fabricated by employing strain-balanced SiGe/Si Bragg reflectors, and it was observed that photoluminescence from Ge dots embedded in the microcavity structure was significantly modulated due to the cavity effect. The characteristic luminescence of the microcavity was observed up to 200 K, and the thermal activation energy of the luminescence was largely improved compared with that of cavities with quantum wells.