Comparison of arsenic and phosphorus diffusion behavior in silicon-germanium alloys
Comparison of arsenic and phosphorus diffusion behavior in silicon-germanium alloys
复制标题
硅锗合金中砷和磷扩散行为的比较
DOI：
10.1063/1.1458047
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发表时间：
2002
影响因子：
4
通讯作者：
E. Fitzgerald
中科院分区：
文献类型：
--
作者：
S. Eguchi;J. Hoyt;C. Leitz;E. Fitzgerald
本文研究了离子注入砷和磷在弛豫Si_（0.8）Ge_（0.2）中的扩散行为。在平衡的非本征条件下，观察到这两种掺杂剂在SiGe中比在Si中扩散得更快。模拟测得的配置文件表明，在Si 0.8Ge 0.2中的有效扩散率的比率相比，在Si中的大约是7砷，大约是2磷。在瞬态扩散条件下，砷在SiGe中的扩散率被延迟，并且扩散的幅度与在Si中的扩散的幅度大致相同。该结果表明，可以优化扩散条件以实现在SiGe中与在Si中一样浅的n+源极/漏极结。
The diffusion behavior of ion-implanted arsenic and phosphorus in relaxed Si0.8Ge0.2 has been investigated. Under equilibrium, extrinsic conditions, both dopants are observed to diffuse faster in SiGe than in Si. Simulations of the measured profiles suggest that the ratio of the effective diffusivity in Si0.8Ge0.2 compared to that in Si is roughly seven for arsenic, and roughly two for phosphorus. Under transient diffusion conditions, the arsenic diffusivity in SiGe is retarded, and the magnitude of the diffusion is roughly the same as that in Si. This result suggests that it is possible to optimize the diffusion conditions to achieve n+ source/drain junctions that are as shallow in SiGe as in Si.