220–250-GHz Phased-Array Circuits in 0.13-$\mu{\hbox {m}}$ SiGe BiCMOS Technology
220–250-GHz Phased-Array Circuits in 0.13-$\mu{\hbox {m}}$ SiGe BiCMOS Technology
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采用 0.13-$mu{hbox {m}}$ SiGe BiCMOS 技术的 220–250-GHz 相控阵电路
DOI：
10.1109/tmtt.2013.2258032
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发表时间：
2013
影响因子：
4.3
通讯作者：
J. Scheytt
中科院分区：
文献类型：
--
作者：
M. Elkhouly;S. Glisic;C. Meliani;F. Ellinger;J. Scheytt
本文介绍了采用 0.13 μm BiCMOS 技术的 220-250 GHz 相控阵电路的设计。详细介绍了相控阵系统中使用的有源和无源器件（例如巴伦、威尔金森分配器和支线耦合器）的设计方面。毫米波矢量调制器旨在支持波束形成应用的幅度和相位控制。将设计的电路集成在一起形成四通道220-250GHz相控阵芯片。每个通道均具有 360° 相位控制和 18 dB 幅度控制。整个芯片从 3.3V 电源汲取 167mA 电流。毫米波相移和低功耗使其成为成像、辐射测量和通信应用的高度集成可扩展波束形成系统的理想选择。
This paper describes the design of 220-250-GHz phased-array circuits in 0.13- μm BiCMOS technology. The design aspects of the active and passive devices that are used in the phased-array systems, such as balun, Wilkinson divider, and branch-line coupler, are presented in details. A millimeter-wave vector modulator is designed to support both amplitude and phase control for beam-forming applications. The designed circuits are integrated together to form a four-channel 220-250-GHz phased-array chip. Each channel exhibits 360° phase control with 18 dB of amplitude control. The entire chip draws 167 mA from a 3.3-V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging, radiometry, and communication applications.