Multiple photoionisation of Cs and Ba atoms due to creation of 4d hole states
Multiple photoionisation of Cs and Ba atoms due to creation of 4d hole states
复制标题
由于 4d 空穴态的产生而导致 Cs 和 Ba 原子的多重光电离
DOI：
10.1088/0953-4075/22/23/010
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
M. Yoshino
中科院分区：
文献类型：
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作者：
T. Nagata;Y. Itoh;T. Hayaishi;Y. Itikawa;T. Koizumi;T. Matsuo;Yoshinori Sato;E. Shigemasa;A. Yagishita;M. Yoshino
通过测量光离子产额谱（光离子产额与能量的关系），研究了Cs和Ba原子由于产生4d空穴态而引起的多重光电离过程。单色同步辐射被用来激发4d-壳层电子，并在从4d-nl共振激发附近到大4d- in f形共振的高能尾部的能量区域进行测量。在这些区域中的主要产物是双电荷（Cs ~（2+），Ba ~（2+））和三电荷（Cs ~（3+），Ba ~（3+））离子，并且在最低光电子振荡态（4d-1 nl-1）和振荡态（4d-1 nl-1 n 'l'）附近分别开始产生相当数量的Cs ~（4+）和Ba ~（4+）离子。尽管4d空穴态的弛豫主要通过由正常俄歇过程和自电离组成的逐步过程进行，但在弛豫的第一阶段，俄歇震落过程被发现具有相当大的概率（在Cs的情况下通常为0.19-0.38）。从目前的数据估计与Cs中的4D光电离相关的抖落概率在形状共振的高能量尾部的区域中为0.33+或-0.05。
Multiple photoionisation processes of Cs and Ba atoms due to creation of 4d hole states have been studied by measurement of photoion-yield spectra (energy dependence of photoion yield). Monochromatised synchrotron radiation was used to excite the 4d-shell electron, and measurements were made in the energy regions from the neighbourhood of the 4d-nl resonance excitation to the higher-energy tail of the big 4d- in f shape resonance. The main products in these regions are doubly-charged (Cs2+, Ba2+) and triply-charged (Cs3+, Ba3+) ions, and an appreciable number of Cs4+ and Ba4+ ions starts being produced around the lowest photoelectron shake-off (4d-1nl-1) and shake-up (4d-1nl-1n'l') states, respectively. Although the relaxation of the 4d hole states proceeds mainly through stepwise processes consisting of the normal Auger process and autoionisation, Auger shake-off processes are found to have considerable probabilities (typically 0.19-0.38 in the case of Cs) in the first stage of the relaxation. The shake-off probability associated with the 4d photoionisation in Cs estimated from the present data amounts to 0.33+or-0.05 in the region of the higher-energy tail of the shape resonance.
DOI：
--
发表时间：
1984
期刊：
--
影响因子：
--
作者：
高エネルギー物理学研究所
通讯作者：
高エネルギー物理学研究所