Controlled SnO2 nanocrystal growth in SiO2–SnO2 glass‐ceramic monoliths

Controlled SnO2 nanocrystal growth in SiO2–SnO2 glass‐ceramic monoliths
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SiO2-SnO2 微晶玻璃中可控 SnO2 纳米晶体的生长

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发表时间:
2012
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通讯作者:
C. Kinowski
C. Kinowski
中科院分区:
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作者:
T. V. Tran;Trung Bui;S. Turrell;B. Capoen;P. Roussel;M. Bouazaoui;M. Ferrari;O. Cristini;C. Kinowski

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采用溶胶-凝胶法制备了无裂纹的(100-x)SiO2-xSnO 2微晶玻璃,并在1100 °C下退火,首次获得了SnO 2含量为20%的微晶玻璃。热处理导致二氧化硅基质中SnO 2纳米晶体的形成和生长。傅里叶变换拉曼光谱和原位高温X射线衍射的结合使用表明,SnO 2颗粒开始在80 °C下以钙钛矿型相结晶,并且即使在1100 °C下退火后,其平均表观尺寸仍保持在7 nm左右。通过低波数拉曼测定的纳米晶体尺寸和尺寸分布与透射电子显微镜测量结果吻合良好。结果表明,SnO 2纳米晶体的形成和生长施加在二氧化硅基质中的残余孔隙率。版权所有© 2011约翰威利父子有限公司.
Crack-free (100–x) SiO2–x SnO2 glass-ceramic monoliths have been prepared by the sol–gel method obtaining for the first time SnO2 concentrations of 20% with annealing at 1100 °C. Heat-treatment resulted in the formation and growth of SnO2 nanocrystals within the silica matrices. Combined use of Fourier transform–Raman spectroscopy and in situ high-temperature X-Ray diffraction shows that SnO2 particles begin to crystallize in the cassiterite-type phase at 80 °C and that their average apparent size remains around 7 nm, even after annealing at 1100 °C. Nanocrystal sizes and size distributions determined by low-wavenumber Raman are in good agreement with those obtained from transmission electron microscopy measurements. Results indicate that the formation and the growth of SnO2 nanocrystals impose a residual porosity in the silica matrix. Copyright © 2011 John Wiley & Sons, Ltd.