Layer-controllable graphene by plasma thinning and post-annealing
Layer-controllable graphene by plasma thinning and post-annealing
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DOI：
10.1016/j.apsusc.2018.02.100
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发表时间：
2018-05
期刊：
影响因子：
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通讯作者：
Lufang Zhang;Shaopeng Feng;S. Xiao;Gang Shen;Xiumei Zhang;H. Nan;Xiaofeng Gu;Kostya Ostrikov;Kostya Ostrikov
中科院分区：
文献类型：
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作者：
Lufang Zhang;Shaopeng Feng;S. Xiao;Gang Shen;Xiumei Zhang;H. Nan;Xiaofeng Gu;Kostya Ostrikov;Kostya Ostrikov
石墨烯的电子结构关键取决于其层数，因此工程化石墨烯的原子堆叠层的数量对于石墨烯基器件的制备是非常重要的。在本文中，我们展示了一种相对较小的侵入性，高通量和均匀的大面积等离子体减薄石墨烯的基础上的直接轰击效应的快速移动的离子氢或氩物种。可以获得任何期望数量的石墨烯层，包括三层、双层和单层。利用光学显微镜、拉曼光谱和原子力显微镜研究了石墨烯层的结构变化。采用后退火的方法来自愈合离子轰击效应引起的晶格缺陷。这种等离子体蚀刻技术是有效的并且与半导体制造工艺兼容，并且可以在基于石墨烯的器件制造中找到重要的应用。
The electronic structure of graphene depends crucially on its layer number and therefore engineering the number of graphene’s atomic stacking layers is of great importance for the preparation of graphene-based devices. In this paper, we demonstrated a relatively less invasive, high-throughput and uniform large-area plasma thinning of graphene based on direct bombardment effect of fast-moving ionic hydrogen or argon species. Any desired number of graphene layers including trilayer, bilayer and monolayer can be obtained. Structural changes of graphene layers are studied by optical microscopy, Raman spectroscopy and atomic force microscopy. Post annealing is adopted to self-heal the lattice defects induced by the ion bombardment effect. This plasma etching technique is efficient and compatible with semiconductor manufacturing processes, and may find important applications for graphene-based device fabrication.