InGaN laser diode with metal-free laser ridge using n+-GaN contact layers
InGaN laser diode with metal-free laser ridge using n+-GaN contact layers
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使用 n-GaN 接触层的具有无金属激光脊的 InGaN 激光二极管
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
N. Grandjean
中科院分区：
文献类型：
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作者：
M. Malinverni;C. Tardy;M. Rossetti;A. Castiglia;M. Duelk;C. Velez;D. Martin;N. Grandjean
我们报道了顶部金属电极位于激光脊旁边的InGaN边发射激光二极管。通过沉积在该结构顶部的高掺杂n+型GaN层实现电流在脊上的扩散。n+-GaN层的低薄层电阻确保了优异的横向电流扩散，而载流子注入由于n+-GaN顶层和p++-GaN层之间的界面处的电流隧穿而被限制在整个沿着脊。在阈值电流密度为2.4 kA·cm−2的无涂层端面器件上，实现了输出功率为100 mW的400 nm连续激光。
We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n+-type GaN layer deposited on top of the structure. The low sheet resistance of the n+-GaN layer ensures excellent lateral current spreading, while carrier injection is confined all along the ridge thanks to current tunneling at the interface between the n+-GaN top layer and the p++-GaN layer. Continuous-wave lasing at 400 nm with an output power of 100 mW is demonstrated on uncoated facet devices with a threshold current density of 2.4 kA·cm−2.