Effect of Ar/O2 gas ratios on the structure, electrical and optical properties of Na-doped ZnCdO film synthesized by magnetron sputtering
Effect of Ar/O2 gas ratios on the structure, electrical and optical properties of Na-doped ZnCdO film synthesized by magnetron sputtering
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DOI：
10.1007/s10854-016-4897-3
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发表时间：
2016-05
期刊：
影响因子：
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通讯作者：
Z. Hua;Yanping Song;Y. Sui;Yanjie Wu;Shiquan Lv;B. Yao;Li Xiao;Zhanwu Wang;Xiaoyang Liu
中科院分区：
文献类型：
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作者：
Z. Hua;Yanping Song;Y. Sui;Yanjie Wu;Shiquan Lv;B. Yao;Li Xiao;Zhanwu Wang;Xiaoyang Liu
采用射频磁控溅射法在石英衬底上制备了Na掺杂的ZnCdO薄膜[ZCO：Na]。通过X射线衍射、X射线光电子能谱、透射电镜、霍尔测量、光吸收光谱和光致发光等测试手段，研究了Ar：O2比对样品结构、电学和光学性能的影响。结果表明，所制备的ZCO：Na薄膜均为六方纤锌矿结构，无第二相生成。当Ar：O2比从1：5变化到5：1时，Eg先随Ar：O2比的增加而增加，在Ar：O2比为1：1时达到最大值，然后随Ar：O2比的继续增加而明显减小。结果表明，较低的Ar：O2比有利于得到n型ZCO：Na薄膜，而要得到p型ZCO：Na薄膜则需要较高的Ar：O2比。当Ar：O2 = 1：1时，ZCO：Na薄膜具有最佳的p型导电特性，其空穴浓度为1.13 × 1016cm−3，霍尔迁移率为2.54 cm2V−1s− 1，电阻率为2.53 × 102Ω cm。此外，还对Ar：O2比对薄膜电学和光学性能的影响机理以及薄膜p型导电机理进行了探讨。
Na-doped ZnCdO films [ZCO:Na] were grown on quartz substrates at different ratios of argon to oxygen gas flow (Ar:O2) by the radio frequency magnetron sputtering method. The influence of Ar:O2ratio on structure, electrical and optical properties was investigated by using X-ray diffraction, X-ray photoelectron spectroscopy, Transmission electron microscopy, Hall measurements (Hall), optical absorption spectra and Photoluminescence. Results indicated that all obtained ZCO:Na thin films possess the hexagonal wurtzite structure and free from the formation of secondary phases. As the Ar:O2ratios change from 1:5 to 5:1, at first the Egincreases with the Ar:O2ratios increasing and reaches a maximum value at the Ar:O2ratio of 1:1, then decreases evidently with the Ar:O2ratios increasing continually. It is found that the lower Ar:O2ratio is propitious to obtain n-type ZCO:Na film, while the relative higher Ar:O2ratio is required to obtain p-type ZCO:Na thin films. When the Ar:O2ratio is 1:1, the ZCO:Na film shows the best p-type conduction characteristics, which has a hole concentration of 1.13 × 1016cm−3, Hall mobility of 2.54 cm2V−1s−1and resistivity of 2.53 × 102Ω cm. In addition, the mechanism of the influence of Ar:O2ratio on the electrical and optical properties of the film as well as the mechanism of p-type conductivity was discussed in this work.