Highly efficient phosphorescent organic light-emitting diode with a nanometer-thick Ni silicide/polycrystalline p-Si composite anode.
Highly efficient phosphorescent organic light-emitting diode with a nanometer-thick Ni silicide/polycrystalline p-Si composite anode.
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DOI：
10.1364/oe.18.015942
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发表时间：
2010-07
期刊：
影响因子：
3.8
通讯作者：
Yanzhao Li;Zhen Wang;H. Luo;Yan Wang;Wanjin Xu;G. Ran;G. Qin;Weiqiang Zhao;Huiyun Liu-Huiyun-Li
中科院分区：
文献类型：
--
作者：
Yanzhao Li;Zhen Wang;H. Luo;Yan Wang;Wanjin Xu;G. Ran;G. Qin;Weiqiang Zhao;Huiyun Liu-Huiyun-Li
A phosphorescent organic light-emitting diode (PhOLED) with a nanometer-thick (approximately 10 nm) Ni silicide/ polycrystalline p-Si composite anode is reported. The structure of the PhOLED is Al mirror/ glass substrate / Si isolation layer / Ni silicide / polycrystalline p-Si/ V(2)O(5)/ NPB/ CBP: (ppy)(2)Ir(acac)/ Bphen/ Bphen: Cs(2)CO(3)/ Sm/ Au/ BCP. In the composite anode, the Ni-induced polycrystalline p-Si layer injects holes into the V(2)O(5)/ NPB, and the Ni silicide layer reduces the sheet resistance of the composite anode and thus the series resistance of the PhOLED. By adopting various measures for specially optimizing the thickness of the Ni layer, which induces Si crystallization and forms a Ni silicide layer of appropriate thickness, the highest external quantum efficiency and power conversion efficiency have been raised to 26% and 11%, respectively.
