Noise characteristics of GaN-based IMPATTs
Noise characteristics of GaN-based IMPATTs
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GaN 基 IMPATT 的噪声特性
DOI：
10.1109/16.930669
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发表时间：
2001
影响因子：
3.1
通讯作者：
E. Alekseev
中科院分区：
文献类型：
--
作者：
A. K. Panda;D. Pavlidis;E. Alekseev
研究了Wz相和Znb相GaN IMPATT在D波段的噪声特性，并与Si和GaAs基IMPATT进行了比较。GaN基IMPATT的噪声被发现是高于GaAs基IMPATT，但相当于Si基IMPATT。随着工作温度的升高，噪声降低。
The potential of noise characteristics of Wz-phase and Znb-phase GaN IMPATTs is investigated and compared to Si and GaAs-based IMPATTs at D-band. The noise of GaN-based IMPATTs is found to be higher than that of GaAs-based IMPATTs but equivalent to Si-based IMPATTs. For increased operation temperature, the noise is found to decrease.