Imaging charged defects on clean Si(100)-(2×1) with scanning tunneling microscopy
Imaging charged defects on clean Si(100)-(2×1) with scanning tunneling microscopy
复制标题
使用扫描隧道显微镜对干净的 Si(100)-(2×1) 上的带电缺陷进行成像
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
R. G. Clark
中科院分区：
文献类型：
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作者：
G. Brown;H. Grube;M. Hawley;S. R. Schofield;N. Curson;M. Simmons;R. G. Clark
利用扫描隧道显微镜(STM)对清洁的Si(100)-(2×1)表面的带电缺陷进行了成像。以前的研究表明，在没有“C”型缺陷的情况下，表面不钉扎费米能级，允许近表面电荷影响贡献隧道电流的态密度。与III-V半导体晶体解理面的情况一样，电荷诱导的能带弯曲产生了叠加在周期性表面晶格上的长程增强。在n型材料上拍摄的空状态STM图像中可以观察到这一点。在填充态图像中没有看到带弯曲特征。这可以通过考虑表面的能带结构来理解，表面在带隙内具有表面态。在这项工作中观察到的带电缺陷是清洁Si(100)-(2×1)STM研究中常见的类型，然而，并不是所有给定类型的缺陷都表现为带电。这将表明结构上的细微差异或杂质的影响。对p..。
Scanning tunneling microscopy (STM) has been used to image charged defects on the clean Si(100)-(2×1) surface. Previous studies have shown that, in the absence of “C”-type defects, the surface does not pin the Fermi level, allowing near surface charge to influence the state density contributing to the tunneling current. As in the case of cleavage faces of III–V semiconductor crystals, the charge-induced band bending produces long-range enhancements superimposed on the periodic surface lattice. This is observed in empty-state STM images taken on n-type material. No band bending signature is seen in the filled-state images. This can be understood by considering the band structure at the surface, which has surface states within the band gap. The charged defects observed in this work are of the types commonly observed in clean Si(100)-(2×1) STM studies, however, not all defects of a given type appear charged. This would indicate subtle differences in structure or the influence of impurities. Predictions for p...