Analysis of Radiation Damage to Si Solar Cells under High-Fluence Electron Irradiation
Analysis of Radiation Damage to Si Solar Cells under High-Fluence Electron Irradiation
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高通量电子辐照下硅太阳能电池辐射损伤分析
DOI：
10.1143/jjap.35.3918
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发表时间：
1996
影响因子：
1.5
通讯作者：
T. Hisamatsu
中科院分区：
文献类型：
--
作者：
M. Yamaguchi;Stephen Taylor;Ming;S. Matsuda;O. Kawasaki;T. Hisamatsu
Si n ~+-p-p ~+空间太阳电池的辐照测试表明，高注量（> 10 ~（16）cm ~（-2））电子辐照引起短路电流Isc异常增大，随后突然减小，电池失效。一个模型，它可以用来解释这些现象，通过表达的变化在基极区的主要载流子浓度p的电子注量的函数已被提出除了众所周知的模型，其中，我SC减少由于少数载流子寿命减少与照射。由于辐射诱导的缺陷导致的多数载流子俘获导致的p的减小具有两个效应;一个是耗尽层的加宽，这有助于耗尽层中产生的光电流和复合产生电流的增加，第二个是基极层的电阻率的增加，导致Isc的突然减小和太阳能电池的失效。
Radiation testing of Si n+–p–p+ space solar cells has revealed an anomalous increase in short-circuit current I sc, followed by an abrupt decrease and cell failure, induced by high-fluence (>1016 cm-2) electron irradiation. A model which can be used to explain these phenomena by expressing the change in majority-carrier concentration p of the base region as a function of the electron fluence has been proposed in addition to the well-known model in which I sc is decreased due to minority-carrier lifetime reduction with irradiation. The reduction in p due to majority-carrier trapping by radiation-induced defects has two effects; one is broadening of the depletion layer which contributes to the increase in the generated photocurrent and that in the recombination-generation current in the depletion layer, and the second is an increase in the resistivity of the base layer resulting in an abrupt decrease of I sc and failure of the solar cells.