A comparative study of the effects of light and heavy alkali-halide postdeposition treatment on CuGaSe2 and Cu(In,Ga)Se2 thin-film solar cells

A comparative study of the effects of light and heavy alkali-halide postdeposition treatment on CuGaSe2 and Cu(In,Ga)Se2 thin-film solar cells
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轻、重碱卤化物沉积后处理对CuGaSe2和Cu(In,Ga)Se2薄膜太阳能电池影响的比较研究

DOI:
10.1016/j.solener.2020.10.048
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发表时间:
2020
期刊:
影响因子:
6.7
通讯作者:
H. Shibata
H. Shibata
中科院分区:
工程技术2区
文献类型:
--
作者:
S. Ishizuka;N. Taguchi;J. Nishinaga;Y. Kamikawa;H. Shibata

文献摘要

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由于在各种薄膜化合物太阳能电池中的碱金属掺杂,如硫属化物Cu(In,Ga)Se 2(CIGS)、Cu 2 ZnSnS 4(CZTS)和有机-无机混合钙钛矿,光伏性能的增强在光伏技术的发展中是重要的。在这项工作中,轻Li和重Cs掺杂的三元CuGaSe 2(CGS)和四元CIGS薄膜和器件的效果进行了比较。新的发现是:(i)重碱金属卤化物CsF后沉积处理(PDT)改变了CGS膜的表面形态并增加了载流子密度;然而,当与从四元CIGS器件观察到的结果相比时,Cs对CGS光伏性能的有益影响较低;(ii)LiF-PDT导致没有显著的CGS和CIGS膜表面(异质p-n结界面)修改;因此,使用薄的(约30 nm)CdS缓冲层在增强光伏性能方面是无效的;以及(iii)轻Li或重Cs对三元CGS器件的有益效果是适度的;尽管如此,与四元CIGS器件不同,Li可能比Cs更有效。
Enhancement of photovoltaic performance due to alkali-metal doping in various thin-film compound solar cells such as chalcogenide Cu(In,Ga)Se2(CIGS), Cu2ZnSnS4(CZTS), and organic–inorganic hybrid perovskite, is significant in the development of photovoltaic technologies. In this work, the effects of light Li- and heavy Cs-doping in ternary CuGaSe2(CGS) and quaternary CIGS thin-films and devices are compared. The new findings are: (i) heavy alkali-metal halide CsF postdeposition treatment (PDT) modifies the CGS film surface morphology and increases the carrier density; however, the beneficial effects of Cs on the CGS photovoltaic performance are low when compared to the results observed from quaternary CIGS devices; (ii) LiF-PDT leads to no significant CGS and CIGS film surface (hetero p-n junction interface) modifications; thus, the use of a thin (approximately 30 nm) CdS buffer layer is not effective in enhancing photovoltaic performance; and (iii) the beneficial effects of either light Li or heavy Cs on ternary CGS devices are modest; nonetheless, Li may be more effective than Cs, unlike quaternary CIGS devices.