A comparative study of the effects of light and heavy alkali-halide postdeposition treatment on CuGaSe2 and Cu(In,Ga)Se2 thin-film solar cells
A comparative study of the effects of light and heavy alkali-halide postdeposition treatment on CuGaSe2 and Cu(In,Ga)Se2 thin-film solar cells
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轻、重碱卤化物沉积后处理对CuGaSe2和Cu(In,Ga)Se2薄膜太阳能电池影响的比较研究
DOI:
10.1016/j.solener.2020.10.048
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发表时间:
2020
期刊:
影响因子:
6.7
通讯作者:
H. Shibata
中科院分区:
文献类型:
--
作者:
S. Ishizuka;N. Taguchi;J. Nishinaga;Y. Kamikawa;H. Shibata
Enhancement of photovoltaic performance due to alkali-metal doping in various thin-film compound solar cells such as chalcogenide Cu(In,Ga)Se2(CIGS), Cu2ZnSnS4(CZTS), and organic–inorganic hybrid perovskite, is significant in the development of photovoltaic technologies. In this work, the effects of light Li- and heavy Cs-doping in ternary CuGaSe2(CGS) and quaternary CIGS thin-films and devices are compared. The new findings are: (i) heavy alkali-metal halide CsF postdeposition treatment (PDT) modifies the CGS film surface morphology and increases the carrier density; however, the beneficial effects of Cs on the CGS photovoltaic performance are low when compared to the results observed from quaternary CIGS devices; (ii) LiF-PDT leads to no significant CGS and CIGS film surface (hetero p-n junction interface) modifications; thus, the use of a thin (approximately 30 nm) CdS buffer layer is not effective in enhancing photovoltaic performance; and (iii) the beneficial effects of either light Li or heavy Cs on ternary CGS devices are modest; nonetheless, Li may be more effective than Cs, unlike quaternary CIGS devices.