Ion beam analysis of deuterium-implanted Al2O3 and tungsten
Ion beam analysis of deuterium-implanted Al2O3 and tungsten
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DOI：
10.1016/s0022-3115(98)00098-1
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发表时间：
1998-10
影响因子：
3.1
通讯作者：
R. Macaulay-Newcombe;D. Thompson
中科院分区：
文献类型：
--
作者：
R. Macaulay-Newcombe;D. Thompson
在300-500 K温度下，用20-30 keV的氘离子注入单晶钨和Al 2 O3（蓝宝石）以及多晶WESGO-995 Al 2 O3样品。用~ 3 He-D核反应分析法测定了300-800 K下的氘分布。结果表明，在重结晶和随后的分析过程中，都发生了相当大的扩散。模拟数据表明，Al 2 O3的有效（辐射增强）扩散率高达10− 16 m2/s，而300 K时的热扩散率为10− 41 m2/s [J.D.福勒，D。钱德拉，T.S. Elliman，A.W. Payne，K. Verghese，J. Am. Ceram. Soc.60（1977）155.]。模型还表明，大部分注入的氘在表面释放，尽管有很大一部分扩散到比预期离子范围更大的深度。在钨中，注入的氘被捕获在缺陷，似乎是移动的在300 K，使氘的分布，以扩展比离子范围更深。在较高温度下，陷阱能量似乎随时间增加。对数据进行建模表明很少氘通过前表面释放，即大部分扩散到样品的主体中更深处。
Single crystal tungsten and Al2O3(sapphire), and polycrystalline WESGO-995 Al2O3samples were implanted with 20–30 keV deuterium at 300–500 K. The deuterium distributions were determined using3He–D nuclear reaction analysis, at 300–800 K. The results indicated that considerable diffusion occurred both during the implantations and during the subsequent analysis. Modelling the data indicates effective (radiation-enhanced) diffusivities as high as 10−16m2/s in Al2O3, compared to a thermal diffusivity ∼10−41m2/s at 300 K [J.D. Fowler, D. Chandra, T.S. Elliman, A.W. Payne, K. Verghese, J. Am. Ceram. Soc. 60 (1977) 155.]. The modelling also suggests that most of the implanted deuterium was released at the surface, although a significant fraction diffuses to depths greater than the expected ion range. In tungsten, implanted deuterium is trapped at defects that appear to be mobile at 300 K, enabling the deuterium distribution to extend much deeper than the ion range. At higher temperatures the trap energy appears to increase with time. Modelling the data indicates little deuterium release through the front surface, i.e. most diffused deeper into the bulk of the sample.