Recombination processes and photoluminescence intensity in quantum wells under steady-state and transient conditions.
Recombination processes and photoluminescence intensity in quantum wells under steady-state and transient conditions.
复制标题
稳态和瞬态条件下量子阱中的复合过程和光致发光强度。
DOI:
10.1103/physrevb.51.7029
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发表时间:
1995
期刊:
影响因子:
--
通讯作者:
Tsukada
中科院分区:
文献类型:
--
作者:
Brandt;Kanamoto;Gotoda;Isu;Tsukada
We present a theoretical and experimental study of recombination processes in quantum wells. Our model calculations, which include free-excitonic, free-carrier, and defect-mediated nonradiative recombination, describe the dependence of the photoluminescence intensity on excitation density under steady-state conditions and on time under transient conditions. For the former conditions, it is not, in principle, possible to distinguish between excitonic and free-carrier contributions to the photoluminescence intensity. However, an accurate determination of the relative weight of nonradiative and radiative contributions can be made. For transient conditions, on the other hand, excitonic contributions may be identified, while the discrimination between radiative and nonradiative contributions is---though possible---possessed with ambiguities. We finally apply our model to a set of experimental data, taken at 300 K from a single ${\mathrm{In}}_{0.1}$${\mathrm{Ga}}_{0.9}$As/${\mathrm{Al}}_{0.33}$${\mathrm{Ga}}_{0.67}$As quantum well under both steady-state and transient conditions. The results of this analysis demonstrate the consistency of our model and its potential for the quantitative understanding of the recombination dynamics in quantum wells.