FASED: FPGA-Accelerated Simulation and Evaluation of DRAM
FASED: FPGA-Accelerated Simulation and Evaluation of DRAM
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FASED:FPGA 加速 DRAM 仿真和评估
DOI:
10.1145/3289602.3293894
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发表时间:
2019
期刊:
影响因子:
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通讯作者:
K. Asanović
中科院分区:
文献类型:
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作者:
David Biancolin;S. Karandikar;Donggyu Kim;Jack Koenig;Andrew Waterman;J. Bachrach;K. Asanović
Recent work in FPGA-accelerated simulation of ASICs has shown that much of a simulator can be automatically generated from ASIC RTL. Alas, these works rely on simple models of the outer cache hierarchy and DRAM, as mapping ASIC RTL for these components into an FPGA fabric is too complex and resource intensive. To improve FPGA simulation model accuracy, we present FASED, a parameterized generator of composable, high-fidelity, FPGA-hosted last-level-cache and DRAM models. FASED instances are highly performant, yet they maintain timing faithfulness independently of the behavior of the host-FPGA memory system. For a given scheduling policy, a single FASED instance can model nearly the entire space of realizable single-channel DDR3 memory organizations, without resynthesizing the simulator RTL. We demonstrate FASED by integrating it into a flow that automatically transforms RTL for multicore RISC-V processors into full-system simulators that execute at up to 150 target MHz on cloud-hosted FPGAs.