High sensitive and wide detecting range MOS tunneling temperature sensors for on-chip temperature detection
High sensitive and wide detecting range MOS tunneling temperature sensors for on-chip temperature detection
复制标题
用于片上温度检测的高灵敏度、宽检测范围 MOS 隧道温度传感器
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
J. Hwu
中科院分区：
文献类型：
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作者：
Y. Shih;Shian;Tsung;J. Hwu
本文研究了应用与当前 CMOS 技术兼容的高灵敏度金属氧化物半导体 (MOS) 隧道温度传感器的可行性。由于传感器在恒定电压下正向偏置，当传感器从20/spl deg/C加热到110/spl deg/C时，栅极电流增加了500倍以上。然而，当传感器在恒流情况下偏置时，其栅极电压幅度随衬底温度变化显着，灵敏度超过-2 V//spl deg/C。本文的温度灵敏度比传统p-n结的灵敏度提高了一千倍，即约-2 mV//spl deg/C。对于温度传感器阵列，本文提出了一种使用栅极电流增益而不是绝对栅极电流来消除传感器之间栅极电流差异的方法。对于恒流操作，如果电流水平合适，可以获得超过10V//spl deg/C的灵敏度。最后，本文演示了片上检测的真实温度分布。有了这样的高温敏感传感器，就可以将精确的温度检测集成到普通的 CMOS 电路中。
This paper examined the feasibility of applying a highly sensitive metal-oxide-semiconductor (MOS) tunneling temperature sensor, which was compatible with current CMOS technology. As the sensor was biased positively at a constant voltage, the gate current increased more than 500 times when the sensor was heated from 20/spl deg/C to 110/spl deg/C. However, when the sensor was biased at a constant-current situation, its gate voltage magnitude changed significantly with substrate temperature, with a sensitivity exceeding -2 V//spl deg/C. The improvement of temperature sensitivity in this paper is one thousand times over the sensitivity of a conventional p-n junction, i.e., namely, about -2 mV//spl deg/C. Regarding a temperature sensor array, this paper proposes a method using gate current gain, rather than absolute gate current, to eliminate the gate current discrepancy among sensors. For constant current operation, a sensitivity exceeding 10 V//spl deg/C can be obtained if the current level is suitable. Finally, this paper demonstrates a real temperature distribution for on-chip detection. With such a high temperature-sensitive sensor, accurate temperature detection can be incorporated into common CMOS circuits.