Subwavelength lithography over extended areas
Subwavelength lithography over extended areas
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DOI：
10.1103/physreva.64.013811
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发表时间：
2001-01
影响因子：
2.9
通讯作者：
G. Bjork;Luis L. Sanchez Soto;J. Soderholm
中科院分区：
文献类型：
--
作者：
G. Bjork;Luis L. Sanchez Soto;J. Soderholm
我们展示了一种系统的方法，以亚波长分辨率平版印刷图像形成的薄膜覆盖面积大于波长的平方。例如，通过使用特定的2m光子，多模纠缠态，其中$Nl~M,$和双折射板，可以制作具有特征尺寸分辨率为$\ensuremath{\lambda}/[2(N+1)]$的光刻图案。通过准备这样的统计混合状态，可以在${2}^{M\ensuremath{-}N}(N+1)\ifmmode\times\else\texttimes\fi{}{2}^{M\ensuremath{-}N}(N+1)$像素网格上形成任意像素模式，网格占据一个边长为${L=2}^{M\ensuremath{-}N\ensuremath{-}1}\ensuremath{\lambda}的正方形。因此，在曝光面积、最小光刻特征尺寸分辨率和用于曝光的光子数量之间存在权衡。我们还表明，所提出的方法即使在非理想条件下也能工作，尽管性能稍差。
We demonstrate a systematic approach to subwavelength resolution lithographic image formation on films covering areas larger than a wavelength squared. For example, it is possible to make a lithographic pattern with a feature size resolution of $\ensuremath{\lambda}/[2(N+1)]$ by using a particular 2M-photon, multimode entangled state, where $Nl~M,$ and banks of birefringent plates. By preparing such a statistically mixed state, one can form any pixel pattern on a ${2}^{M\ensuremath{-}N}(N+1)\ifmmode\times\else\texttimes\fi{}{2}^{M\ensuremath{-}N}(N+1)$ pixel grid occupying a square with side ${L=2}^{M\ensuremath{-}N\ensuremath{-}1}\ensuremath{\lambda}.$ Hence, there is a trade off between the exposed area, the minimum lithographic feature size resolution, and the number of photons used for the exposure. We also show that the proposed method will work even under nonideal conditions, albeit with somewhat poorer performance.