Quantitative measurements of thermal relaxation of isolated silicon hillocks and craters on the Si(111)-7 x 7 surface by scanning tunneling microscopy.
Quantitative measurements of thermal relaxation of isolated silicon hillocks and craters on the Si(111)-7 x 7 surface by scanning tunneling microscopy.
复制标题
通过扫描隧道显微镜定量测量 Si(111)-7 x 7 表面上孤立的硅丘和火山口的热弛豫。
DOI：
10.1103/physrevlett.76.4721
复制
发表时间：
1996
影响因子：
8.6
通讯作者：
Ishiyama
中科院分区：
文献类型：
--
作者：
Ichimiya;Tanaka;Ishiyama
在衬底温度为400 ~ 600℃的条件下，首次测量了硅丘的热分解速率和硅坑的填充速率，测量了探针尖端对热分解速率的影响，并在没有探针尖端影响的情况下确定了还原速率。丘分解活化能为1.5±0.1 eV，填坑活化能为1.3±0.2 eV。指前因子山丘为2× 10 11±1 s−1，环形山为3× 10 9±2 s−1。我们从二维气相过程和Schwoebel效应的角度讨论了结果。
Thermal decomposition rates of silicon hillocks and filling-up rates of craters are, for the first time, measured at various substrate temperatures of 400 to 600 C. Effects of the probe tip on the rates are measured, and the reduced rates are determined without the tip effects. Activation energies for hillock decomposition and crater filling up are determined as 1.5±0.1 and 1.3±0.2 eV, respectively. Preexponential factors are 2× 10 11±1 s− 1 for hillocks and 3× 10 9±2 s− 1 for craters. We discuss the results in terms of two-dimensional vapor phase processes and the Schwoebel effect.