Bioinspired Polydopamine-Based Resistive-Switching Memory on Cotton Fabric for Wearable Neuromorphic Device Applications

Bioinspired Polydopamine-Based Resistive-Switching Memory on Cotton Fabric for Wearable Neuromorphic Device Applications
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DOI:
10.1002/admt.201900151
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发表时间:
2019-08-01
影响因子:
6.8
通讯作者:
Choi, Yang-Kyu
Choi, Yang-Kyu
中科院分区:
材料科学2区
文献类型:
--
作者:
Bae, Hagyoul;Kim, Daewon;Choi, Yang-Kyu

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基于织物的电子纺织品(e-textiles)已被研究用于制造具有良好耐用性的高性能可穿戴电子设备。当前的电子纺织品技术不仅受到所用材料的微妙特性的限制,还受到织物基材的限制,这对制造过程造成了限制。据报道,一种具有电阻式随机存取存储器(RRAM)架构的聚多巴胺(PDA)嵌入织物存储器(PiFAM)用于基于织物的可穿戴设备,这是朝着超越最简单的有前途的神经形态设备迈出的一步。它是由棉纱交织而成。基于溶液的浸涂方法用于制造功能性核壳纱线。外壳涂有 PDA,内壳涂有围绕芯纱的铝 (Al),芯纱作为主干。 Al 壳用作 RRAM 电极,PDA 是电阻切换层。然后将这些功能性纱线交织在一起,在晶格点中形成 RRAM。未经处理的纱线插入相邻的功能纱线之间,以避免细胞与细胞之间的干扰。应用 PiFAM 实现突触,展示了模式识别准确率接近 81% 的神经形态设备的可行性以及在可穿戴和柔性电子平台中的应用潜力。
Fabric-based electronic textiles (e-textiles) have been investigated for the fabrication of high-performance wearable electronic devices with good durability. Current e-textile technology is limited by not only the delicate characteristics of the materials used but also by the fabric substrates, which impose constraints on the fabrication process. A polydopamine (PDA)-intercalated fabric memory (PiFAM) with a resistive random access memory (RRAM) architecture is reported for fabric-based wearable devices, as a step towards promising neuromorphic devices beyond the most simple. It is composed of interwoven cotton yarns. A solution-based dip-coating method is used to create a functional core-shell yarn. The outer shell is coated with PDA and the inner shell is coated with aluminum (Al) surrounding the core yarn, which serves as a backbone. The Al shell serves as the RRAM electrode and the PDA is a resistive-switching layer. These functional yarns are then interwoven to create the RRAM in a lattice point. Untreated yarn is intercalated between adjacent functional yarns to avoid cell-to-cell interference. The PiFAM is applied to implement a synapse, and the feasibility of a neuromorphic device with pattern recognition accuracy of approximate to 81% and the potential for application in wearable and flexible electronic platforms is demonstrated.