Universal In Situ Substitutional Doping of Transition Metal Dichalcogenides by Liquid Phase Precursor-Assisted Synthesis.
Universal In Situ Substitutional Doping of Transition Metal Dichalcogenides by Liquid Phase Precursor-Assisted Synthesis.
复制标题
液相前驱体辅助合成过渡金属二硫属化合物的通用原位取代掺杂。
DOI：
10.1021/acsnano.9b09857
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发表时间：
2020-03
期刊：
影响因子：
17.1
通讯作者：
Tianyi Zhang;K. Fujisawa;Fu Zhang;Mingzu Liu;Michael C. Lucking;R. N. Gontijo;Y. Lei;He Liu
中科院分区：
文献类型：
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作者：
Tianyi Zhang;K. Fujisawa;Fu Zhang;Mingzu Liu;Michael C. Lucking;R. N. Gontijo;Y. Lei;He Liu
掺杂是现代半导体技术的核心。因此，对于二维(2D)半导体过渡金属二卤化物(TMD)来说，控制掺杂的意义也不例外。最近的研究表明，通过选择合适的掺杂剂对二维TMD进行取代掺杂，可以有效地调节其电、光、磁和催化性能，使其具有巨大的实际应用潜力。在此，受溶胶-凝胶法的启发，我们报道了一种液相前驱体辅助的单层TMD及其掺杂浓度可调的面内异质结构的原位置换掺杂方法。这种高度可重复性的方法是基于含有主体和掺杂前体的旋涂水溶液的高温硫化反应。在合成过程之前，前体在液相中的原子水平上被均匀混合，从而允许改善掺杂的均匀性和可控性。我们进一步证明了不同的过渡金属原子，如铁(Fe)、Re(Re)和V(V)掺杂到TMD单分子膜的晶格中，从而形成了Fe掺杂的WS2和重新掺杂的MoS2，以及更复杂的材料体系，如V掺杂的面内WxMo1-xS2-MoxW1-xS2异质结等。我们设想，我们开发的方法是通用的，可以扩展到将各种其他元素整合到2D TMD中，并在一步内创建平面内异质接口，这可能使电子学和自旋电子学等应用达到2D的极限。
Doping lies at the heart of modern semiconductor technologies. Therefore, for two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), the significance of controlled doping is no exception. Recent studies have indicated that, by substitutionally doping 2D TMDs with a judicious selection of dopants, their electrical, optical, magnetic and catalytic properties can be effectively tuned, endowing them with great potential for various practical applications. Herein, and inspired by the sol-gel process, we report a liquid phase precursor-assisted approach for in situ substitutional doping of monolayered TMDs and their in-plane heterostructures with tunable doping concentration. This highly reproducible route is based on the high-temperature chalcogenation of spin-coated aqueous solutions containing host and dopant precursors. The precursors are mixed homogeneously at the atomic level in the liquid phase prior to the synthesis process, thus allowing for an improved doping uniformity and controllability. We further demonstrate the incorporation of various transition metal atoms, such as iron (Fe), rhenium (Re) and vanadium (V), into the lattice of TMD monolayers, so as to form Fe-doped WS2, Re-doped MoS2, and more complex material systems such as V-doped in-plane WxMo1-xS2-MoxW1-xS2 heterostructures, among others. We envisage that our developed approach is universal and could be extended to incorporate a variety of other elements into 2D TMDs and create in-plane hetero-interfaces in a single-step, which may enable applications such as electronics and spintronics at the 2D limit.