Physics of base charge dynamics in the three port transistor laser

Physics of base charge dynamics in the three port transistor laser
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三端口晶体管激光器基极电荷动力学物理

DOI:
10.1063/1.3364143
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发表时间:
2010
影响因子:
4
通讯作者:
N. Holonyak
N. Holonyak
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
H. Then;M. Feng;N. Holonyak

文献摘要

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在前人不完全电荷控制分析的基础上,建立了量子阱晶体管激光器的基电荷动力学模型。我们将基尔霍夫定律扩展到包括电学和一贯的“光学”元素。该模型通过微波测量(和可分辨的皮秒响应)得到与TL基电荷相关的物理量,从而可以提取基QW电荷密度,nQW=2×1016 cm−3,与电流连续性计算一致。低密度意味着TL基极中的准费米能级不连续,表明基极量子阱的电荷水平不如驱动量子阱和提供电子-空穴复合的电流重要。
The base charge dynamics of the quantum-well (QW) transistor laser (TL) is analyzed by constructing a model based on earlier incomplete charge control analysis. We extend Kirchhoff’s Law to include electrical and consistently “optical” elements. The model yields, via microwave measurements (and resolvable picosecond responses), physical quantities associated with TL base-charging, permitting the extraction of a base QW charge density, nQW=2×1016 cm−3, consistent with calculation by current continuity. The low density implies quasi-Fermi level discontinuity in the TL base, and indicates that the base QW charge level is not as important as the current driving the QW and supplying electron-hole recombination.